Growth and Characterization of an a-Plane Inx 1?x N on a r-Plane Sapphire
ZHAO Gui-Juan** , LI Zhi-Wei, WEI Hong-Yuan, LIU Gui-Peng, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
Abstract ：The non-polar a-plane (112 0) Inx 1?x N alloys with different indium compositions (0.074≤x ≤0.555) were grown on r-plane (101 2) sapphire substrates by metalorganic chemical vapor deposition, and the indium compositions x are estimated from x-ray diffraction measurements. The in-plane orientation of the Inx 1?x N with respect to the r-plane substrate is confirmed to be [1 100]sapphire || [112 0]Inx 1?x N and [1 101]sapphire || [0001]Inx 1?x N . The effects of substrate temperature, reactor pressure and trimethylindium input flow on the indium incorporation and growth rate are investigated. The morphology of the a-plane Inx 1?x N is found to be significantly improved with the decreasing indium composition x and growth rate. Moreover, the in-plane anisotropic structural characteristics are revealed by high resolution x-ray diffraction employing azimuthal dependence, and the degree of anisotropy decreases with the increase of indium composition.
收稿日期: 2012-08-16
出版日期: 2012-11-28
:
71.55.Eq
(III-V semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.05.Ea
(III-V semiconductors)
引用本文:
. [J]. Chin. Phys. Lett., 2012, 29(11): 117103-117103.
x 1?x N on a r-Plane Sapphire. Chin. Phys. Lett., 2012, 29(11): 117103-117103.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/29/11/117103
或
https://cpl.iphy.ac.cn/CN/Y2012/V29/I11/117103
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2012, Vol. 29 
