Photo-Induced Spin Dynamics in Nanoelectronic Devices
Mina D. Asham1** , Walid A. Zein2 , Adel H. Phillips2**
1 Faculty of Engineering, Benha University, Benha, Egypt2 Faculty of Engineering, Ain-Shams University, Cairo, Egypt
Abstract ：The present research is devoted to the investigation of electron spin transmission through a nanoelectronic device. This device is modeled as nonmagnetic semiconductor quantum dot coupled to two diluted magnetic semiconductor leads. The spin transport characteristics through such a device are investigated under the effect of an ac-field of a wide range of frequencies. The present result shows a periodic oscillation of the conductance for both the cases of parallel and antiparallel spin alignment. These oscillations are due to Fano-resonance. Results for spin polarization and giant magneto-resistance show the coherency property. The present research might be useful for developing single spin-based quantum bits (qubits) required for quantum information processing and quantum spin-telecommunication.
收稿日期: 2012-02-20
出版日期: 2012-10-01
:
85.75.-d
(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
85.75.Hh
(Spin polarized field effect transistors)
85.35.Be
(Quantum well devices (quantum dots, quantum wires, etc.))
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2012, Vol. 29 
