An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
ZHANG Chao1,2,3**, SONG Zhi-Tang1, WU Guan-Ping2, LIU Bo1**, WANG Lian-Hong2, XU Jia2, LIU Yan1, WANG Lei2, YANG Zuo-Ya2, FENG Song-Lin1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 3Graduate University of the Chinese Academy of Sciences, Beijing 100049
An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
ZHANG Chao1,2,3**, SONG Zhi-Tang1, WU Guan-Ping2, LIU Bo1**, WANG Lian-Hong2, XU Jia2, LIU Yan1, WANG Lei2, YANG Zuo-Ya2, FENG Song-Lin1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2United Lab, Semiconductor Manufacturing International Corporation, Shanghai 201203 3Graduate University of the Chinese Academy of Sciences, Beijing 100049
摘要An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13 µm CMOS technology. By using dual trench isolated structure in the memory cell, it is feasible to employ a Si−diode as a selector for integration in a crossbar structure for high-density phase change memory even at 45 nm technology node and beyond. A cross-point memory selector with a large on/off current ratio is demonstrated, the diode provides nine orders of magnitude isolation between forward and reverse biases in the SET state. A low SET programming current of 0.7 mA is achieved and RESET/SET resistance difference of 10000× is obtained.
Abstract：An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13 µm CMOS technology. By using dual trench isolated structure in the memory cell, it is feasible to employ a Si−diode as a selector for integration in a crossbar structure for high-density phase change memory even at 45 nm technology node and beyond. A cross-point memory selector with a large on/off current ratio is demonstrated, the diode provides nine orders of magnitude isolation between forward and reverse biases in the SET state. A low SET programming current of 0.7 mA is achieved and RESET/SET resistance difference of 10000× is obtained.
ZHANG Chao1,2,3**, SONG Zhi-Tang1, WU Guan-Ping2, LIU Bo1**, WANG Lian-Hong2, XU Jia2, LIU Yan1, WANG Lei2, YANG Zuo-Ya2, FENG Song-Lin1. An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector[J]. 中国物理快报, 2012, 29(3): 38104-038104.
ZHANG Chao, SONG Zhi-Tang, WU Guan-Ping, LIU Bo, WANG Lian-Hong, XU Jia, LIU Yan, WANG Lei, YANG Zuo-Ya, FENG Song-Lin. An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector. Chin. Phys. Lett., 2012, 29(3): 38104-038104.
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2012, Vol. 29 
