We investigate the influence of Fe contamination on the minority carrier lifetimes of multi-crystalline silicon. The minority carrier lifetime is measured by the microwave photoconductive decay method. The original bulk lifetime is about 30 μs after passivation with iodine solution. After intentional Fe contamination, the bulk lifetime declines with increasing temperature. Fast cooling in air conduces to the formation of more interstitial Fe ([Fe]i). Slow cooling through the control of the furnace temperature limits the formation of more [Fe]i, but leads to the formation of precipitation. The data support the idea that the minority carrier lifetime in multi-crystalline silicon mainly depends on the distribution of Fe but not the total amount. A favorite effect of [Fe]i gettering is discovered after conventional phosphorus diffusion, and the [Fe]i concentration remaining in the silicon wafer is acceptable for solar cell applications.
We investigate the influence of Fe contamination on the minority carrier lifetimes of multi-crystalline silicon. The minority carrier lifetime is measured by the microwave photoconductive decay method. The original bulk lifetime is about 30 μs after passivation with iodine solution. After intentional Fe contamination, the bulk lifetime declines with increasing temperature. Fast cooling in air conduces to the formation of more interstitial Fe ([Fe]i). Slow cooling through the control of the furnace temperature limits the formation of more [Fe]i, but leads to the formation of precipitation. The data support the idea that the minority carrier lifetime in multi-crystalline silicon mainly depends on the distribution of Fe but not the total amount. A favorite effect of [Fe]i gettering is discovered after conventional phosphorus diffusion, and the [Fe]i concentration remaining in the silicon wafer is acceptable for solar cell applications.
MENG Xia-Jie;MA Zhong-Quan;LI Feng;SHEN Cheng;YIN Yan-Ting;ZHAO Lei;LI Yong-Hua;XU Fei. Influence of Fe Contamination on the Minority Carrier Lifetime of Multi-crystalline Silicon[J]. 中国物理快报, 2010, 27(7): 76101-076101.
MENG Xia-Jie, MA Zhong-Quan, LI Feng, SHEN Cheng, YIN Yan-Ting, ZHAO Lei, LI Yong-Hua, XU Fei. Influence of Fe Contamination on the Minority Carrier Lifetime of Multi-crystalline Silicon. Chin. Phys. Lett., 2010, 27(7): 76101-076101.
[1] Macdonald D, Cuevas A, Kinomura A, Nakano A and Geerligs L J 2005 J. Appl. Phys. 97 033523 [2] Buonassisi T, Istratov A A, Heuer M, Marcus M A, Jonczyk R, Isenberg J, Lai B, Cai Z, Heald S, Warta W, Schindler R, Willeke G and Weber E R 2005 J. Appl. Phys. 97 074901 [3] Macdonald D, Roth T, Deenapanray P, Trupke T and Bardos A 2006 Appl. Phys. Lett. 89 142107 [4] Istratov A, Hieslmair H and Weber E R 1999 Appl. Phys. A 69 13 [5] Macdonald D, Cuevas A and Wong-Lueng J 2001 J. Appl. Phys. 89 7932 [6] Hayamizu Y, Hamaguchi T, Ushio S and Abe T 1991 J. Appl. Phys. 69 3077 [7] Lagowski J, Edelman P, Kontkiewicz A M, Milic O, Henley W, Dexter M, Jastrzebski L and Hoff A M 1993 Appl. Phys. Lett. 63 3043 [8] Macdonald D H, Geerligs L J and Azzizi A, 2004 J. Appl. Phys. 95 1021 [9] Shockley W and Read W 1952 Phys. Rev. 87 835 [10] Stephens A W and Green M A 1997 Sol. Energy Mater. Sol. Cells 45 255 [11] Hofstetter J, Leliévre J F, Cannizo and C, Luque L 2009 Mater. Sci. Eng. B 159 299 [12] Henley W B and Ramappa D A 1997 J. Appl. Phys. 82 589 [13] Ramappa D A and Henley W B 1997 J. Electrochem. Soc. 144 4353 [14] Dubios S, Palais O, Ribeyron P J, Enjalbert N, Pasquinelli M and Martinuzzi 2007 J. Appl. Phys. 102 083525