Enhancement in Thermoelectrical Power Factor of N-Type Si80Ge20 Alloys
XU Ya-Dong, XU Gui-Ying, LIU Yan-Hong, GE Chang-Chun
Laboratory of Special Ceramics and Powder Metallurgy, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
Enhancement in Thermoelectrical Power Factor of N-Type Si80Ge20 Alloys
XU Ya-Dong, XU Gui-Ying, LIU Yan-Hong, GE Chang-Chun
Laboratory of Special Ceramics and Powder Metallurgy, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
摘要Influences of the carrier concentration and mobility of heavily doped n-type Si80Ge20 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoelectrical power factors of 32--36μWcm-1K-2 could be consistently achieved with carrier concentrations of 2.1--2.9×1020cm-3 and carrier mobilities of 36--40cm2V-1s-1. However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are discussed.
Abstract:Influences of the carrier concentration and mobility of heavily doped n-type Si80Ge20 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoelectrical power factors of 32--36μWcm-1K-2 could be consistently achieved with carrier concentrations of 2.1--2.9×1020cm-3 and carrier mobilities of 36--40cm2V-1s-1. However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are discussed.