Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation
MAO Xue** , HAN Pei-De, HU Shao-Xu, GAO Li-Peng, LI Xin-Yi, MI Yan-Hong, LIANG Peng
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract ：Optical and electrical properties of single-crystal Si supersaturated with Se by ion implantation and followed by different thermal annealing conditions are reported. Si is implanted with 1×1016 cm?2 Se ions at 100 keV. The total substitutional fraction of Se atoms in Si is 45% under the annealing at 800°C for 30 min and the peak concentration of substitutional Se atoms is exceeded 1×1020 cm?3 . A temperature-independent carrier concentration of 3×1019 cm?3 is measured and the near-infrared absorption is closed to 30%. These results indicate the insulator-to-metal transition of the doped layer and the formation of impurity bands in the Si band gap.
收稿日期: 2012-02-24
出版日期: 2012-10-01
:
71.30.+h
(Metal-insulator transitions and other electronic transitions)
81.05.Cy
(Elemental semiconductors)
78.66.Db
(Elemental semiconductors and insulators)
引用本文:
. [J]. 中国物理快报, 2012, 29(9): 97101-097101.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/29/9/097101
或
https://cpl.iphy.ac.cn/CN/Y2012/V29/I9/97101
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2012, Vol. 29 
