Silicon on Insulator with Highly Uniform Top Si Fabricated by H/He Coimplantation
Xin Su1,2 , Nan Gao1,2 , Meng Chen3 , Hong-Tao Xu3 , Xing Wei1,2,3** , Zeng-Feng Di1,2**
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502 University of Chinese Academy of Sciences, Beijing 1000493 Shanghai Simgui Technology Co., Ltd., Shanghai 201815
Abstract ：Silicon on insulator with highly uniform top Si is fabricated by co-implantation of H$^{+}$ and He$^{+}$ ions. Compared with the conventional ion-slicing process with H implantation only, the co-implanted specimens whose He depth is deeper than H profile have the top Si layer with better uniformity after splitting. In addition, the splitting occurs at the position that the maximum concentration peak of H overlaps with the secondary concentration peak of He after annealing. It is suggested that the H/He co-implantation technology is a promising approach for fabricating fully depleted silicon on insulator.
收稿日期: 2019-02-11
出版日期: 2019-05-18
:
85.40.Ry
(Impurity doping, diffusion and ion implantation technology)
81.20.-n
(Methods of materials synthesis and materials processing)
81.05.Cy
(Elemental semiconductors)
[1] Bruel M 1995 Electron. Lett. 31 1201 [2] Grisolia J et al 2000 Appl. Phys. Lett. 76 852 [3] Nguyen P et al 2005 J. Appl. Phys. 97 083527 [4] Agarwal A et al 1998 Appl. Phys. Lett. 72 1086 [5] Weldon M K, Collot M, Chabal Y J et al 1998 Appl. Phys. Lett. 73 3721 [6] Huang L, Tong Q, Chao Y et al 1999 Appl. Phys. Lett. 74 982 [7] Aspar B, Bruel M, Moriceau H et al 1997 Microelectron. Eng. 36 233 [8] Reboh S, Schaurich F, Declemy A et al 2010 J. Appl. Phys. 108 023502 [9] Moutanabbir O, Terreault B, Chicoine M et al 2007 Phys. Rev. B 75 075201 [10] Nguyen P, Bourdelle K K, Maurice T et al 2007 J. Appl. Phys. 101 033506 [11] Daghbouj N, Cherkashin N, Darras F X et al 2016 J. Appl. Phys. 119 135308 [12] Cherkashin N, Daghbouj N, Seine G et al 2018 J. Appl. Phys. 123 161556 [13] Cherkashin N, Daghbouj N, Darras F X et al 2015 J. Appl. Phys. 118 245301 [14] Schwarzenbach W, Cauchy X, Bonnin O et al 2011 ECS Trans. 35 239 [15] Ziegler J F and Biersack J P, See http://www.srim.org for SRIM computer code [16] Bedell S W and Lanford W A 2001 J. Appl. Phys. 90 1138 [17] H?chbauer T F, Misra A et al 2006 Nucl. Instrum. Methods Phys. Res. 242 623 [18] Terreault B 2007 Phys. Status Solidi A 204 2129 [19] Moutanabbir O, Terreault B, Chicoine M et al 2005 Appl. Phys. A 80 1455 [20] Moutanabbir O and Terreault B 2005 Appl. Phys. Lett. 86 051906 [21] Personnic S, Bourdelle K K, Letertre F et al 2008 J. Appl. Phys. 103 023508
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.
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.
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2019, Vol. 36 
