中国物理快报  2015, Vol. 32 Issue (10): 108502-108502    DOI: 10.1088/0256-307X/32/10/108502
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Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations
LÜ Wei-Feng**, WANG Guang-Yi, LIN Mi, SUN Ling-Ling
College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018