Fabrication and Electrical Characteristics of Individual ZnO Submicron-Wire Field-Effect Transistor
JIANG Wei, GAO Hong**, XU Ling-Ling
Key Laboratory of Semiconductor Nanocomposite Materials (Ministry of Education), School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025
Fabrication and Electrical Characteristics of Individual ZnO Submicron-Wire Field-Effect Transistor
JIANG Wei, GAO Hong**, XU Ling-Ling
Key Laboratory of Semiconductor Nanocomposite Materials (Ministry of Education), School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025
Fabrication and electrical characteristics of individual ZnO submicro-wire field-effect transistors (FETs) are investigated by a simple micro-grid template method. The fabricated back-gate ZnO submicro-wire FET is characterized at room temperature in air. The gate voltage Vgs curves reveal gating effect characteristic of n−type conductivity. The field effect mobility of the ZnO submicro-wire is determined to be 7.9 cm2/V·s at Vds=2 V, the capacitance and transconductance are estimated to be about 3.9 fF and 15.5 nS, respectively. UV sensitive property is measured using a 325-nm laser as the excitation source. Compared to the result carried in darkness, the ZnO submicro-wire FET is sensitive to UV irradiation, which indicates its potential application on UV detectors. Experimental results show that the approach introduced here allows the possibility of fabricating low-cost, reliable and flexible microelectronic devices.
Fabrication and electrical characteristics of individual ZnO submicro-wire field-effect transistors (FETs) are investigated by a simple micro-grid template method. The fabricated back-gate ZnO submicro-wire FET is characterized at room temperature in air. The gate voltage Vgs curves reveal gating effect characteristic of n−type conductivity. The field effect mobility of the ZnO submicro-wire is determined to be 7.9 cm2/V·s at Vds=2 V, the capacitance and transconductance are estimated to be about 3.9 fF and 15.5 nS, respectively. UV sensitive property is measured using a 325-nm laser as the excitation source. Compared to the result carried in darkness, the ZnO submicro-wire FET is sensitive to UV irradiation, which indicates its potential application on UV detectors. Experimental results show that the approach introduced here allows the possibility of fabricating low-cost, reliable and flexible microelectronic devices.
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2012, Vol. 29 
