Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra
YUE Fang-Yu1,2, CHEN Lu3, WU Jun3, HU Zhi-Gao1, LI Ya-Wei1, YANG Ping-Xiong1, CHU Jun-Hao 1,2
1Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai 2002412National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000833Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra
YUE Fang-Yu1,2, CHEN Lu3, WU Jun3, HU Zhi-Gao1, LI Ya-Wei1, YANG Ping-Xiong1, CHU Jun-Hao 1,2
1Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai 2002412National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000833Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
摘要Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe (x≈0.3). The results show that the doped As mainly acting as donors in the as-grown samples can be fully activated as AsTe by two-stage anneals of 285°C/16h + 240°C/48h, of which the ionization energy has been determined to be about 10.5meV, slightly smaller than that of intrinsic VHg (about 14.5meV). However, the higher activation temperature (e.g. 400°C) at the first-stage can produce large numbers of excessive VHg and seriously deteriorate the quality of epilayers. This could give a brief guideline for preparing extrinsic p-type HgCdTe materials or devices.
Abstract：Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe (x≈0.3). The results show that the doped As mainly acting as donors in the as-grown samples can be fully activated as AsTe by two-stage anneals of 285°C/16h + 240°C/48h, of which the ionization energy has been determined to be about 10.5meV, slightly smaller than that of intrinsic VHg (about 14.5meV). However, the higher activation temperature (e.g. 400°C) at the first-stage can produce large numbers of excessive VHg and seriously deteriorate the quality of epilayers. This could give a brief guideline for preparing extrinsic p-type HgCdTe materials or devices.
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2009, Vol. 26 
