Spectral Response and Photoelectrochemical Properties of Cd1-xZnxSe Films
N. J. Suthan Kissinger1, G. Gnana Kumar2, K. Perumal3, J. Suthagar4
1Department of Physics, Loyola Institute of Technology and Sciences, Loyola Nager, Thovalai, India 2Specialized Graduate School of Hydrogen and Fuel Cell Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea 3Department of Physics, SRMV College of Arts and Science, Coimbatore, India 4Department of Physics, Karunya University, Coimbatore, India
Spectral Response and Photoelectrochemical Properties of Cd1-xZnxSe Films
N. J. Suthan Kissinger1, G. Gnana Kumar2, K. Perumal3, J. Suthagar4
1Department of Physics, Loyola Institute of Technology and Sciences, Loyola Nager, Thovalai, India 2Specialized Graduate School of Hydrogen and Fuel Cell Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea 3Department of Physics, SRMV College of Arts and Science, Coimbatore, India 4Department of Physics, Karunya University, Coimbatore, India
Cd1-xZnxSe films with different zinc contents are deposited by an electron beam evaporation technique onto glass substrates for applications in solid-state photovoltaic devices. The structural, optical and photoelectrochemical (PEC) properties of Cd1-xZnxSe films are studied. The host material Cd1-xZnxSe is prepared by the physical vapor deposition method of electron beam evaporation technique (PVD: EBE) under a pressure of 1× 10-5 mbar. The x-ray diffractogram indicates that these alloy films are polycrystalline in nature, hexagonal structure with strong preferential orientation of the crystallites along (002) direction. The optical properties shows that the band gap Eg varies from 2.08 to 2.84 eV as zinc content varies from 0.2 to 0.8. A PEC cell of the configuration n-Cd1-xZnxSe/Na2S-S-NaOH is fabricated and the dynamic current-voltage characteristics in the dark atmosphere have been examined at room temperature. It has been found that both Voc and Isc decrease with the photoelectrode composition x. Efficiency η and fill factor (FF) also show similar variations. The material properties would be altered and excellently controlled by controlling the system composition x.
Cd1-xZnxSe films with different zinc contents are deposited by an electron beam evaporation technique onto glass substrates for applications in solid-state photovoltaic devices. The structural, optical and photoelectrochemical (PEC) properties of Cd1-xZnxSe films are studied. The host material Cd1-xZnxSe is prepared by the physical vapor deposition method of electron beam evaporation technique (PVD: EBE) under a pressure of 1× 10-5 mbar. The x-ray diffractogram indicates that these alloy films are polycrystalline in nature, hexagonal structure with strong preferential orientation of the crystallites along (002) direction. The optical properties shows that the band gap Eg varies from 2.08 to 2.84 eV as zinc content varies from 0.2 to 0.8. A PEC cell of the configuration n-Cd1-xZnxSe/Na2S-S-NaOH is fabricated and the dynamic current-voltage characteristics in the dark atmosphere have been examined at room temperature. It has been found that both Voc and Isc decrease with the photoelectrode composition x. Efficiency η and fill factor (FF) also show similar variations. The material properties would be altered and excellently controlled by controlling the system composition x.
N. J. Suthan Kissinger;G. Gnana Kumar;K. Perumal;J. Suthagar. Spectral Response and Photoelectrochemical Properties of Cd1-xZnxSe Films[J]. 中国物理快报, 2010, 27(5): 57102-057102.
N. J. Suthan Kissinger, G. Gnana Kumar, K. Perumal, J. Suthagar. Spectral Response and Photoelectrochemical Properties of Cd1-xZnxSe Films. Chin. Phys. Lett., 2010, 27(5): 57102-057102.
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