Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method
XIA Xiao-Chuan1, WANG Hui2, ZHAO Yang2, WANG Jin2, ZHAO Jian-Ze1, SHI Zhi-Feng2, LI Xiang-Ping1, LIANG Hong-Wei1, ZHANG Bao-Lin2, DU Guo-Tong1,2**
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012
Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method
XIA Xiao-Chuan1, WANG Hui2, ZHAO Yang2, WANG Jin2, ZHAO Jian-Ze1, SHI Zhi-Feng2, LI Xiang-Ping1, LIANG Hong-Wei1, ZHANG Bao-Lin2, DU Guo-Tong1,2**
1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012
摘要Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method. Under our growth conditions the main doping element is arsenic, which was confirmed by x-ray photoelectroscopy. X-ray diffraction measurements revealed that the p-ZnO:As film was still in the (002) preferred orientation. The Hall test showed that the hole concentration of the p-ZnO:As film was 2.6 × 1017 cm−3. The acceptor level was located at 135 meV above the valance band maximum, according to the low-temperature photoluminescence results. We then fabricated a p-ZnO:As/n-Si heterojunction light-emitting device. Its current-voltage curve showed the typical rectifying behavior of a p–n diode. At forward current injections, the electroluminescence peaks, which cover the ultraviolet-to-visible region, could be clearly detected.
Abstract：Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method. Under our growth conditions the main doping element is arsenic, which was confirmed by x-ray photoelectroscopy. X-ray diffraction measurements revealed that the p-ZnO:As film was still in the (002) preferred orientation. The Hall test showed that the hole concentration of the p-ZnO:As film was 2.6 × 1017 cm−3. The acceptor level was located at 135 meV above the valance band maximum, according to the low-temperature photoluminescence results. We then fabricated a p-ZnO:As/n-Si heterojunction light-emitting device. Its current-voltage curve showed the typical rectifying behavior of a p–n diode. At forward current injections, the electroluminescence peaks, which cover the ultraviolet-to-visible region, could be clearly detected.
XIA Xiao-Chuan;WANG Hui;ZHAO Yang;WANG Jin;ZHAO Jian-Ze;SHI Zhi-Feng;LI Xiang-Ping;LIANG Hong-Wei;ZHANG Bao-Lin;DU Guo-Tong;**
. Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method[J]. 中国物理快报, 2011, 28(10): 108101-108101.
XIA Xiao-Chuan, WANG Hui, ZHAO Yang, WANG Jin, ZHAO Jian-Ze, SHI Zhi-Feng, LI Xiang-Ping, LIANG Hong-Wei, ZHANG Bao-Lin, DU Guo-Tong, **
. Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method. Chin. Phys. Lett., 2011, 28(10): 108101-108101.
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2011, Vol. 28 
