2011, Vol. 28(10): 108101-108101    DOI: 10.1088/0256-307X/28/10/108101
	Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method
	XIA Xiao-Chuan1, WANG Hui2, ZHAO Yang2, WANG Jin2, ZHAO Jian-Ze1, SHI Zhi-Feng2, LI Xiang-Ping1, LIANG Hong-Wei1, ZHANG Bao-Lin2, DU Guo-Tong1,2**
	1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 2State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012
	收稿日期 2011-01-08  修回日期 1900-01-01
	Supporting info
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