摘要A red-emitting CaZrO3:Eu3+ phosphor has been prepared by solid state reaction and its luminescent properties are studied. The crystal structure is investigated by the x−ray diffraction. Through energy transitions of 5D0→7FJ (J=0, 1, 2, 3) in Eu3+ ions, the emission spectrum of the phosphor shows a series of narrow bands under near−ultraviolet light and the strongest peak locates at 613 nm. The emission intensity of Ca1-xZrO3:xEu3+ phosphor will reach the maximum as the molar concentration of Eu3+ is 5 mol%.
Abstract：A red-emitting CaZrO3:Eu3+ phosphor has been prepared by solid state reaction and its luminescent properties are studied. The crystal structure is investigated by the x−ray diffraction. Through energy transitions of 5D0→7FJ (J=0, 1, 2, 3) in Eu3+ ions, the emission spectrum of the phosphor shows a series of narrow bands under near−ultraviolet light and the strongest peak locates at 613 nm. The emission intensity of Ca1-xZrO3:xEu3+ phosphor will reach the maximum as the molar concentration of Eu3+ is 5 mol%.
LI Xu;GUAN Li**;AN Jia-Yi;JIN Li-Tao;YANG Zhi-Ping;YANG Yan-Min;LI Pan-Lai;FU Guang-Sheng
. Synthesis of Red Phosphor CaZrO3:Eu3+ for White Light-Emitting Diodes[J]. 中国物理快报, 2011, 28(2): 27805-027805.
LI Xu, GUAN Li**, AN Jia-Yi, JIN Li-Tao, YANG Zhi-Ping, YANG Yan-Min, LI Pan-Lai, FU Guang-Sheng
. Synthesis of Red Phosphor CaZrO3:Eu3+ for White Light-Emitting Diodes. Chin. Phys. Lett., 2011, 28(2): 27805-027805.
[1] Im W B, Kim Y, Fellows N N, Masui H and Hirata G A 2008 Appl. Phys. Lett. 93 091905
[2] Hao Z D, Zhang J H, Zhang X, Sun X Y, Luo Y S, Lu S Z and Wang X J 2007 Appl. Phys. Lett. 90 261113
[3] Hu Y S, Zhuang W D, Ye H Q, Zhuang S S, Fang Y and Huang X W 2005 J. Lumin. 111 139
[4] Park J K, Choi K J, Kim C H, Park H D and Kim H K 2004 J. Electrochem. Solid State Lett. 7 H42
[5] Liu J, Sun J Y and Shi C S 2006 Mater. Lett. 60 2830
[6] Zhang M, Wang J, Zhang Q Y, Ding W J and Su Q 2007 Mater. Res. Bull. 1 33
[7] Li Y Q, With G D and Hintzen H T 2004 J. Alloy. Compd. 385 1
[8] Chen C W, Jing X P, Yan C H, Lin J H and Liao F H 2006 J. Cryst. Growth 290 554
[9] Kottaisamy M, Jagannathan R, Rao R P, Avudaithai M, Srinivasan L K and Sundaram V 1995 J. Electrochem. Soc. 142 3205
[10] Bai X, Song H W, Pan G H, Liu Z X, Lu S Z, Di W H, Ren X G, Lei Y Q, Dai Q L and Fan L B 2006 Appl. Phys. Lett. 88 143104
[11] Tian L H and Mho S I 2007 J. Lumin. 122–123 99
[12] Wang J G, Jing X P, Yan C H, Lin J H and Liao F H al 2006 J. Lumin. 121 57
[13] Zhang H W, Fu X Y, Niu S Y and Xin Q 2008 J. Alloy. Compd. 459 103
[14] Gu F, Li C Z and Jiang H B 2006 J. Cryst. Growth 289 400
[15] Lu C H, Huang C H and Cheng B M 2009 J. Alloy Compd. 473 376
[16] Koopmans H J A, van de Velde G M H and Gellings P J 1983 J. Gellings Acta Crystal. C 39 1323
[17] Zhou L Y, Wei J S, Gong F Z, Huang J L and Yi L H 2008 J. Solid. Stat. Chem. 181 1337
[18] Blasse G 1969 Philips Res. Rep. 24 131
[19] Dexter D L and Schulman J H 1954 J. Chem. Phys. 22 1063
[20] Van Uitert L G 1967 J. Electrochem. Soc. 114 1048
2011, Vol. 28 
