Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures
KIM Bong-Hwan1**, PARK Seoung-Hwan1***, LEE Jung-Hee2, MOON Yong-Tae3
1Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, R. Korea 2School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, R. Korea 3LG Corporate Institute of Technology, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, R. Korea
Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures
KIM Bong-Hwan1**, PARK Seoung-Hwan1***, LEE Jung-Hee2, MOON Yong-Tae3
1Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, R. Korea 2School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, R. Korea 3LG Corporate Institute of Technology, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, R. Korea
摘要The effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures is theoretically investigated. The sheet carrier density is shown to increase nearly linearly with In mole fraction x, due to the increase in the polarization charge at the AlGaN/InGaN interface. The electron sheet density is enhanced with the doping in the AlGaN layer. The sheet carrier density is as high as 3.7×1013 cm−2 at the donor density of 10×1018 cm−3 for the HEMT structure with x=0.3. The contribution of additional donor density on the electron sheet density is nearly independent of the In mole fraction.
Abstract：The effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures is theoretically investigated. The sheet carrier density is shown to increase nearly linearly with In mole fraction x, due to the increase in the polarization charge at the AlGaN/InGaN interface. The electron sheet density is enhanced with the doping in the AlGaN layer. The sheet carrier density is as high as 3.7×1013 cm−2 at the donor density of 10×1018 cm−3 for the HEMT structure with x=0.3. The contribution of additional donor density on the electron sheet density is nearly independent of the In mole fraction.
KIM Bong-Hwan**;PARK Seoung-Hwan***;LEE Jung-Hee;MOON Yong-Tae. Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures[J]. 中国物理快报, 2010, 27(11): 118501-118501.
KIM Bong-Hwan**, PARK Seoung-Hwan***, LEE Jung-Hee, MOON Yong-Tae. Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures. Chin. Phys. Lett., 2010, 27(11): 118501-118501.
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2010, Vol. 27 
