Demonstration of GaN/InGaN Light Emitting Diodes on (100) β-Ga2O3 Substrates by Metalorganic Chemical Vapour Deposition
XIE Zi-Li1, ZHANG Rong1, XIA Chang-Tai2, XIU Xiang-Qian1, HAN Ping1, LIU Bin1, ZHAO Hong1, JIANG Ruo-Lian1, SHI Yi1, ZHENG You-Dou1
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 2100932Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
Demonstration of GaN/InGaN Light Emitting Diodes on (100) β-Ga2O3 Substrates by Metalorganic Chemical Vapour Deposition
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 2100932Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
摘要The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes (LEDs) on (100) β-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) θ-2θ scan spectroscopy is carried out on the GaN buffer layer grown on a (100) β-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the (100) β-Ga2O3 and (004) GaN. High-quality (0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on β-Ga2O3 with vertical current injection is demonstrated.
Abstract：The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes (LEDs) on (100) β-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) θ-2θ scan spectroscopy is carried out on the GaN buffer layer grown on a (100) β-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the (100) β-Ga2O3 and (004) GaN. High-quality (0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on β-Ga2O3 with vertical current injection is demonstrated.
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2008, Vol. 25 
