2008, Vol. 25(6): 2185-2186 DOI: | ||
Demonstration of GaN/InGaN Light Emitting Diodes on (100) β-Ga2O3 Substrates by Metalorganic Chemical Vapour Deposition | ||
XIE Zi-Li1, ZHANG Rong1, XIA Chang-Tai2, XIU Xiang-Qian1, HAN Ping1, LIU Bin1, ZHAO Hong1, JIANG Ruo-Lian1, SHI Yi1, ZHENG You-Dou1 | ||
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 2100932Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 | ||
收稿日期 2007-11-14 修回日期 1900-01-01 | ||
Supporting info | ||
[1]Reed M D et al 2005 J. Crystal Growth 274 14 [2]Gardner N F et al 2005 Appl. Phys. Lett. 86 [3] Shimamura K et al 2005 Jpn. J. Appl. Phys. 44 [4] Zhang J G et al 2006 J. Functional Mater. 37 [5] Chichibu S et al 1998 J. Vac. Sci. Technol. B |
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