摘要Mode behaviour for SOI slot waveguides is modelled and analysed using a numerical full vectorial method based on the film mode matching method (MMM). Only the quasi-TE mode is investigated. Waveguide heights and slot widths, as well as silicon widths are properly chosen with respect to the single mode behaviour in the slot region. Comparison between the effective index method and our side loss method shows that our single mode condition is creditable. The optical power confinement in slot region for the quasi-TE mode is also studied and presented. We demonstrate that the maximum achievable optical power confinement Pslot and the maximum normalized average optical intensity Islot are 42% and 26μm-2, respectively.
Abstract：Mode behaviour for SOI slot waveguides is modelled and analysed using a numerical full vectorial method based on the film mode matching method (MMM). Only the quasi-TE mode is investigated. Waveguide heights and slot widths, as well as silicon widths are properly chosen with respect to the single mode behaviour in the slot region. Comparison between the effective index method and our side loss method shows that our single mode condition is creditable. The optical power confinement in slot region for the quasi-TE mode is also studied and presented. We demonstrate that the maximum achievable optical power confinement Pslot and the maximum normalized average optical intensity Islot are 42% and 26μm-2, respectively.
LIU Yan;XU Xue-Jun;CHEN Shao-Wu;YU Jin-Zhong. Modelling and Analysis of Modal Behaviour in SOI Slot Waveguides[J]. 中国物理快报, 2008, 25(8): 2918-2921.
LIU Yan, XU Xue-Jun, CHEN Shao-Wu, YU Jin-Zhong. Modelling and Analysis of Modal Behaviour in SOI Slot Waveguides. Chin. Phys. Lett., 2008, 25(8): 2918-2921.
2008, Vol. 25 
