A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix
YANG Di, LI Yan-Ping, CHEN Shao-Wu, YU Jin-Zhong
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix
YANG Di;LI Yan-Ping;CHEN Shao-Wu;YU Jin-Zhong
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
42.82.Ds ,
42.82.Cr
Abstract ： A 4×4 strictly nonblocking thermo-optic switch matrix implemented with a 2×2 Mach--Zehnder switch unit was fabricated in silicon-on-insulator wafer. Insertion losses of the shortest and the longest path in the device are about 14.8dB and 19.2dB, respectively. The device presents a very low loss dependent on wavelength. For one switch unit, the power consumption needed for operation is measured to be 0.270W--0.288W and the switching time is about 13±1μs.
Key words ：
42.82.Ds
42.82.Cr
出版日期: 2005-06-01
:
42.82.Ds
(Interconnects, including holographic interconnects)
42.82.Cr
(Fabrication techniques; lithography, pattern transfer)
引用本文:
YANG Di;LI Yan-Ping;CHEN Shao-Wu;YU Jin-Zhong. A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix[J]. 中国物理快报, 2005, 22(6): 1446-1448.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I6/1446
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