High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect
SUN Fei, YU Jin-Zhong, CHEN Shao-Wu
National Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect
SUN Fei;YU Jin-Zhong;CHEN Shao-Wu
National Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
42.82.Ds ,
42.82.Et
Abstract ： Based on free carrier plasma dispersion effect, a 2×2 optical switch is fabricated in a silicon-on insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach--Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04dB and a response time of 496ns.
Key words ：
42.82.Ds
42.82.Et
出版日期: 2005-12-01
:
42.82.Ds
(Interconnects, including holographic interconnects)
42.82.Et
(Waveguides, couplers, and arrays)
引用本文:
SUN Fei;YU Jin-Zhong;CHEN Shao-Wu. High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect[J]. 中国物理快报, 2005, 22(12): 3097-3099.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I12/3097
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2005, Vol. 22 
