摘要We present our experimental results supporting optical--electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser-irradiated Ge2Sb2Te5 films exhibits an abrupt change of four orders of magnitude (from 107 to 103Ω/sq) with increasing laser power, current-voltage curves of the amorphous area and the laser-crystallized dots, measured by a conductive atomic force microscope (C-AFM), show that their resistivities are 2.725 and 3.375×10-3Ω, respectively, the surface current distribution in the films also shows high and low resistance states. All these results suggest that the laser-recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical--electrical hybrid data storage possible.
Abstract：We present our experimental results supporting optical--electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser-irradiated Ge2Sb2Te5 films exhibits an abrupt change of four orders of magnitude (from 107 to 103Ω/sq) with increasing laser power, current-voltage curves of the amorphous area and the laser-crystallized dots, measured by a conductive atomic force microscope (C-AFM), show that their resistivities are 2.725 and 3.375×10-3Ω, respectively, the surface current distribution in the films also shows high and low resistance states. All these results suggest that the laser-recorded bit can be read electrically by measuring the change of electrical resistivity, thus making optical--electrical hybrid data storage possible.
SUN Hua-Jun;HOU Li-Song;WU Yi-Qun;ZHAI Feng-Xiao. A Feasible Approach to Optical--Electrical Hybrid Data Storage Using Phase Change Material[J]. 中国物理快报, 2008, 25(8): 2915-2917.
SUN Hua-Jun, HOU Li-Song, WU Yi-Qun, ZHAI Feng-Xiao. A Feasible Approach to Optical--Electrical Hybrid Data Storage Using Phase Change Material. Chin. Phys. Lett., 2008, 25(8): 2915-2917.
2008, Vol. 25 
