Damage Removal and Strain Relaxation in As+ -Implanted Si0.57 Ge0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy
ZOU Lü-fan, WANG Zhan-guo, SUN Dian-zhao, FAN Ti-wen, LIU Xue-feng, ZHANG Jing-wei
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Damage Removal and Strain Relaxation in As+ -Implanted Si0.57 Ge0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy
ZOU Lü-fan;WANG Zhan-guo;SUN Dian-zhao;FAN Ti-wen;LIU Xue-feng;ZHANG Jing-wei
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
68.55.Bd ,
68.55.Ln ,
68.55.Jk
Abstract ： The damage removal and strain relaxation in the As+ -implanted Si0.57 Ge0.43 epilayers were studied by double-crystal x-ray diffractornetry and transmission electron microscopy. The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950°C results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.
Key words ：
68.55.Bd
68.55.Ln
68.55.Jk
出版日期: 1997-03-01
引用本文:
ZOU Lü-fan;WANG Zhan-guo;SUN Dian-zhao;FAN Ti-wen;LIU Xue-feng;ZHANG Jing-wei. Damage Removal and Strain Relaxation in As+ -Implanted Si0.57 Ge0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy
[J]. 中国物理快报, 1997, 14(3): 209-212.
+ -Implanted Si0.57 Ge0.43 Epilayers Grown by Gas Source Molecular Beam Epitaxy
. Chin. Phys. Lett., 1997, 14(3): 209-212.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I3/209
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1997, Vol. 14 
