Low-Temperature (<100°C) Poly-Si Thin Film Fabrication on Glass
WANG Cheng-Long1,2, FAN Duo-Wang1,2, SUN Shuo3, ZHANG Fu-Jia3, LIU Hong-Zhong4
1National Engineering Research Center for Technology and Equipment of Green Coating, Lanzhou Jiaotong University, Lanzhou 7300702MOE Key Lab of Opto-electronic Technology and Intelligence Control, Lanzhou Jiaotong University, Lanzhou 7300703School of Physics Science and Technology, Lanzhou University, Lanzhou 7300004State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049
Low-Temperature (<100°C) Poly-Si Thin Film Fabrication on Glass
WANG Cheng-Long1,2, FAN Duo-Wang1,2, SUN Shuo3, ZHANG Fu-Jia3, LIU Hong-Zhong4
1National Engineering Research Center for Technology and Equipment of Green Coating, Lanzhou Jiaotong University, Lanzhou 7300702MOE Key Lab of Opto-electronic Technology and Intelligence Control, Lanzhou Jiaotong University, Lanzhou 7300703School of Physics Science and Technology, Lanzhou University, Lanzhou 7300004State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049
Polycrystalline silicon (poly-Si) thin-film is fabricated on Al-coated planar glass substrates at the temperature below 100°C, using aluminium-induced crystallized (AIC) amorphous silicon (a-Si) deposited by dc-magnetron sputtering under an electric field. The properties of NA poly-Si films (AIC of dc-magnetron sputtered silicon non-annealing) are characterized by Raman spectroscopy and x-ray diffraction (XRD) spectroscopy. A narrow and symmetrical Raman peak at a wave number of about 521cm-1 is observed for samples, showing that the films are fully crystallized. XRD spectra reveal that the films are preferentially (111) oriented. Furthermore, the XRD spectrum of the sample prepared without electric field does not show any XRD peaks for poly-Si, which only appears at about 38°for Al (111) orientation. It is indicated that the electric field plays an important role in crystallization of poly-Si during the dc-magnetron sputtering. Thus, high quality poly-Si film can be obtained at low temperature and separate post-deposition step of AIC of a-silicon can be avoided.
Polycrystalline silicon (poly-Si) thin-film is fabricated on Al-coated planar glass substrates at the temperature below 100°C, using aluminium-induced crystallized (AIC) amorphous silicon (a-Si) deposited by dc-magnetron sputtering under an electric field. The properties of NA poly-Si films (AIC of dc-magnetron sputtered silicon non-annealing) are characterized by Raman spectroscopy and x-ray diffraction (XRD) spectroscopy. A narrow and symmetrical Raman peak at a wave number of about 521cm-1 is observed for samples, showing that the films are fully crystallized. XRD spectra reveal that the films are preferentially (111) oriented. Furthermore, the XRD spectrum of the sample prepared without electric field does not show any XRD peaks for poly-Si, which only appears at about 38°for Al (111) orientation. It is indicated that the electric field plays an important role in crystallization of poly-Si during the dc-magnetron sputtering. Thus, high quality poly-Si film can be obtained at low temperature and separate post-deposition step of AIC of a-silicon can be avoided.
WANG Cheng-Long;FAN Duo-Wang;SUN Shuo;ZHANG Fu-Jia;LIU Hong-Zhong. Low-Temperature (<100°C) Poly-Si Thin Film Fabrication on Glass[J]. 中国物理快报, 2009, 26(1): 18102-018102.
WANG Cheng-Long, FAN Duo-Wang, SUN Shuo, ZHANG Fu-Jia, LIU Hong-Zhong. Low-Temperature (<100°C) Poly-Si Thin Film Fabrication on Glass. Chin. Phys. Lett., 2009, 26(1): 18102-018102.
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2009, Vol. 26 
