We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450°C and 2.1nm, respectively. A rms surface roughness of 0.67nm over 10×10μm2 is achieved as a 0.5μm GaSb film is grown under optimized conditions.
We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450°C and 2.1nm, respectively. A rms surface roughness of 0.67nm over 10×10μm2 is achieved as a 0.5μm GaSb film is grown under optimized conditions.
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2009, Vol. 26 
