Structural and Magnetic Properties of Sm Implanted GaN
JIANG Li-Juan, WANG Xiao-Liang, XIAO Hong-Ling, WANG Zhan-Guo, FENG Chun, ZHANG Ming-Lan, TANG Jian
Novel Materials Laboratory, Institute of Semiconductors, and Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083
Structural and Magnetic Properties of Sm Implanted GaN
JIANG Li-Juan, WANG Xiao-Liang, XIAO Hong-Ling, WANG Zhan-Guo, FENG Chun, ZHANG Ming-Lan, TANG Jian
Novel Materials Laboratory, Institute of Semiconductors, and Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083
摘要The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005)037205, Phys. Rev. B 72(2005)245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.
Abstract：The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005)037205, Phys. Rev. B 72(2005)245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.
JIANG Li-Juan;WANG Xiao-Liang;XIAO Hong-Ling;WANG Zhan-Guo;FENG Chun;ZHANG Ming-Lan;TANG Jian. Structural and Magnetic Properties of Sm Implanted GaN[J]. 中国物理快报, 2009, 26(7): 77502-077502.
JIANG Li-Juan, WANG Xiao-Liang, XIAO Hong-Ling, WANG Zhan-Guo, FENG Chun, ZHANG Ming-Lan, TANG Jian. Structural and Magnetic Properties of Sm Implanted GaN. Chin. Phys. Lett., 2009, 26(7): 77502-077502.
[1] Dhar S, Brandt O, Ramsteiner M, Sapega V F and Ploog K H2005 Phys. Rev. Lett. 94 037205 [2] Dhar S, Perez L, Brandt O, Trampert A, Ploog K H, Keller Jand Beschoten B 2005 Phys. Rev. B 72 245203 [3] Zhou Y K, Kim M S, Li X J, S Kimura, Kaneta A, Kawakami Y,Fujita S, Emura S, Hasegawa S and Asahi H 2004 J. Phys.:Condens. Matter 16 S5743 [4] Dhar S 2006 Proceedings of the Department of AtomicEnergy Solid State Physics Symposium (Bhopal, India 26--30 December2006) vol 51 p 25 [5] Steckel A J and Birkhahn R 1998 Appl. Phys. Lett. 73 1700 [6] Kim S, Rhee S J, Turnbull D A, Li X, Coleman J J, Bishop SG and Klein P B 1997 Appl. Phys. Lett. 71 2662 [7] Dhar S, Kammermeier T, Ney A, Perez L, Ploog K H, MelnikovA and Wieck A D 2006 Appl. Phys. Lett. 89 062503 [8] Hite J, Thaler G T, Khanna R, Khanna R, C R Abernathy,Pearton S J, Park J H, Steckl A J and Zavada J M 2006 Appl.Phys. Lett. 89 132119 [9] Gruber J B, Zandi B, Lozykowski H J and Jadwisienczak W M2002 J. Appl. Phys. 91 2929 [10] Pipeleers B, Hogg S M and Vantomme A 2005 J. Appl.Phys. 98 123504 [11] Liu C, Mensching B, Zeitler M, Volz K and Rauschenbach B1998 Phys. Rev. B 57 2530 [12] Moon R M and Koehler W C 1979 J. Magn. Magn. Mater. 14 265
2009, Vol. 26 
