An Origin of Dzyaloshinskii–Moriya Interaction at Graphene-Ferromagnet Interfaces Due to the Intralayer RKKY/BR Interaction
Jin Yang1, Jian Li1, Liangzhong Lin2, and Jia-Ji Zhu1*
1School of Science and Laboratory of Quantum Information Technology, Chongqing University of Posts and Telecommunications, Chongqing 400065, China 2School of Information Engineering, Zhongshan Polytechnic, Zhongshan 528400, China
Abstract:We present a theory of both the itinerant carrier-mediated RKKY interaction and the virtual excitations-mediated Bloembergen–Rowland (BR) interaction between magnetic moments in graphene induced by proximity effect with a ferromagnetic film. It is shown that the RKKY/BR interaction consists of the Heisenberg, Ising, and Dzyaloshinskii–Moriya (DM) terms. In the case of the nearest distance, we estimate the DM term from the RKKY/BR interaction is about $0.13$ meV for the graphene/Co interface, which is consistent with the experimental result of DM interaction $0.16\pm0.05$ meV. Our calculations indicate that the intralayer RKKY/BR interaction may be a possible physical origin of the DM interaction in the graphene-ferromagnet interface. This work provides a new perspective to comprehend the DM interaction in graphene/ferromagnet systems.
. [J]. 中国物理快报, 2020, 37(8): 87501-087501.
Jin Yang, Jian Li, Liangzhong Lin, and Jia-Ji Zhu. An Origin of Dzyaloshinskii–Moriya Interaction at Graphene-Ferromagnet Interfaces Due to the Intralayer RKKY/BR Interaction. Chin. Phys. Lett., 2020, 37(8): 87501-087501.
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