中国物理快报  2016, Vol. 33 Issue (11): 118501-118501    DOI: 10.1088/0256-307X/33/11/118501
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Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
Yong-Le Lou1, Yu-Ming Zhang1, Hui Guo1**, Da-Qing Xu2, Yi-Men Zhang1
1School of Microelectronics, Xidian University, Xi'an 710071
2School of Electrical and Control Engineering, Xi'an University of Science and Technology, Xi'an 710054