中国物理快报  2009, Vol. 26 Issue (8): 88104-088104    DOI: 10.1088/0256-307X/26/8/088104
  CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 本期目录 | 过刊浏览 | 高级检索 |
Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing
TANG Jun1, LIU Zhong-Liang1, KANG Chao-Yang1, PAN Hai-Bin1, WEI Shi-Qiang1, XU Peng-Shou1, GAO Yu-Qiang2, XU Xian-Gang2
1National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 2300292State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100
Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing
TANG Jun1, LIU Zhong-Liang1, KANG Chao-Yang1, PAN Hai-Bin1, WEI Shi-Qiang1, XU Peng-Shou1, GAO Yu-Qiang2, XU Xian-Gang2
1National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 2300292State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100