| 2009, Vol. 26(8): 88104-088104 DOI: 10.1088/0256-307X/26/8/088104 | ||
| Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing | ||
| TANG Jun1, LIU Zhong-Liang1, KANG Chao-Yang1, PAN Hai-Bin1, WEI Shi-Qiang1, XU Peng-Shou1, GAO Yu-Qiang2, XU Xian-Gang2 | ||
| 1National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 2300292State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 | ||
| 收稿日期 2009-04-21 修回日期 1900-01-01 | ||
| Supporting info | ||
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