摘要The current slump of different recipes of SiNx passivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AlGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiNx passivated devices. We analyze the pulsed IDS-VDS characteristics of different recipes of SiNx passivation devices for different combinations of gate and drain quiescent biases (VGS0, VDS0) of (0, 0), (-6, 0), (-6, 15) and (0, 15)V. The possible mechanisms are the traps in SiNx passivation capturing the electrons and the surface states at the SiNx/AlGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse.
Abstract：The current slump of different recipes of SiNx passivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AlGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiNx passivated devices. We analyze the pulsed IDS-VDS characteristics of different recipes of SiNx passivation devices for different combinations of gate and drain quiescent biases (VGS0, VDS0) of (0, 0), (-6, 0), (-6, 15) and (0, 15)V. The possible mechanisms are the traps in SiNx passivation capturing the electrons and the surface states at the SiNx/AlGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse.
YANG Ling;HAO Yue;MA Xiao-Hua;QUAN Si;HU Gui-Zhou;JIANG Shou-Gao;YANG Li-Yuan. Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump[J]. 中国物理快报, 2009, 26(11): 117104-117104.
YANG Ling, HAO Yue, MA Xiao-Hua, QUAN Si, HU Gui-Zhou, JIANG Shou-Gao, YANG Li-Yuan. Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump. Chin. Phys. Lett., 2009, 26(11): 117104-117104.
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2009, Vol. 26 
