Microstructural Characterization for Ge Clusters Embedded in
a-SiN<suB>y</suB> Matrix Prepared by PECVD Method

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	QU Xuexuan
	CHEN Kunji
	WANG Mingxiang
	LI Zhifeng
	XIA Hua
	FENG Duan

关键词 ： 81.15.Gh, 68.55.Jk, 68.90.+g

Abstract： We report the successful synthesis of Ge clusters embedded in a-SiN_y : H matrix prepared by the plasma enhanced chemical vapor deposition (PECVD) method. Chemical and microstructural characteristics of this granular thin film were analyzed using the infrared absorption, x-ray diffraction, Raman scattering, and transmission electron microscopy. Finally we discuss briefly the synthesis mechanism of this new material.

Key words： 81.15.Gh 68.55.Jk 68.90.+g

出版日期: 1994-04-01

:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.Jk
	68.90.+g	(Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures)

引用本文:

QU Xuexuan;CHEN Kunji;WANG Mingxiang;LI Zhifeng;XIA Hua;FENG Duan. Microstructural Characterization for Ge Clusters Embedded in a-SiN_y Matrix Prepared by PECVD Method [J]. 中国物理快报, 1994, 11(4): 253-256.
QU Xuexuan, CHEN Kunji, WANG Mingxiang, LI Zhifeng, XIA Hua, FENG Duan. Microstructural Characterization for Ge Clusters Embedded in a-SiN_y Matrix Prepared by PECVD Method . Chin. Phys. Lett., 1994, 11(4): 253-256.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y1994/V11/I4/253