A New Method for Studying the Distribution of Induced Defects in Potential Wells in a-Si : H/a-SiNx : H Multilayer
WANG Zhichao, GUO Shengkang, CAO Guorong, CHEN Cai, SUN Meixiang
Department of Physics, Nanjing University, Nanjing 210008
A New Method for Studying the Distribution of Induced Defects in Potential Wells in a-Si : H/a-SiNx : H Multilayer
WANG Zhichao;GUO Shengkang;CAO Guorong;CHEN Cai;SUN Meixiang
Department of Physics, Nanjing University, Nanjing 210008
关键词 ：
64.70.-p ,
68.35.Dr ,
68.65.+g
Abstract ： The induced defects and their distribution in a-Si: H/a-SiNx : H multilayers can be determined by use of electromagnetic technique. It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are asymmetric and related to the growth direction of the film; a large number of induced defects exist in the interface region away from substrate, but few or no in the interface region near substrate.
Key words ：
64.70.-p
68.35.Dr
68.65.+g
出版日期: 1994-09-01
引用本文:
WANG Zhichao;GUO Shengkang;CAO Guorong;CHEN Cai;SUN Meixiang. A New Method for Studying the Distribution of Induced Defects in Potential Wells in a-Si : H/a-SiNx : H Multilayer
[J]. 中国物理快报, 1994, 11(9): 573-576.
x : H Multilayer
. Chin. Phys. Lett., 1994, 11(9): 573-576.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I9/573
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