Reflectivity of W/Si Multilayer at the Photoenergy of 700eV
and 1200eV

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	FENG Shi-Meng
	ZHU Guo-Long
	SHAO Jian-Da
	YI Kui
	FAN Zheng-Xiu

关键词 ： 42.79.Bh, 68.65.+g, 61.10.Eq, 78.66.-w, 81.15.Cd

Abstract： We have deposited W/Si multilayer mirrors using magnetron
sputtering, and measured their reflectivity at the Beijing synchrotron Radiation Facility. The W/Si multilayer mirrors show the peak reflectivity of approximately 10% at a photo-energy of 1200eV and 10.5% at a photo-energy of 700eV at the incidence angle of 81°. So far, no higher reflectivity than that given in this letter has been reported.

Key words： 42.79.Bh 68.65.+g 61.10.Eq 78.66.-w 81.15.Cd

出版日期: 2001-11-01

:	42.79.Bh	(Lenses, prisms and mirrors)
	68.65.+g
	61.10.Eq
	78.66.-w	(Optical properties of specific thin films)
	81.15.Cd	(Deposition by sputtering)

引用本文:

FENG Shi-Meng;ZHU Guo-Long;SHAO Jian-Da;YI Kui;FAN Zheng-Xiu . Reflectivity of W/Si Multilayer at the Photoenergy of 700eV and 1200eV[J]. 中国物理快报, 2001, 18(11): 1481-1482.
FENG Shi-Meng, ZHU Guo-Long, SHAO Jian-Da, YI Kui, FAN Zheng-Xiu . Reflectivity of W/Si Multilayer at the Photoenergy of 700eV and 1200eV. Chin. Phys. Lett., 2001, 18(11): 1481-1482.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2001/V18/I11/1481