Energy Levels of Valence Subbands in Si/Sil-x Gex Quantum Well by Admittance Spectroscopy
LIN Feng, GONG Da-Wei, KE Lian, ZHANG Sheng-Kun, SHENG Chi
Surface Physics Laboratory, Fudan University, Shanghai 200433
Energy Levels of Valence Subbands in Si/Sil-x Gex Quantum Well by Admittance Spectroscopy
LIN Feng;GONG Da-Wei;KE Lian;ZHANG Sheng-Kun;SHENG Chi
Surface Physics Laboratory, Fudan University, Shanghai 200433
关键词 ：
73.20.Dx ,
68.65.+g
Abstract ： Using the admittance spectroscopy technique, energy levels of subbands in SiGe/Si quantum well are studied. The value of activation energy increases with increasing well width, in accordance with the quantum confinement effect. Two conductance peaks due to hole emission from heavy hole ground state and light hole ground state were observed. It was found that the value of activation energy increased with annealing time at the temperature of 800o C, while the activation energy decreases with the annealing time at 900o C.
Key words ：
73.20.Dx
68.65.+g
出版日期: 2000-04-01
引用本文:
LIN Feng;GONG Da-Wei;KE Lian;ZHANG Sheng-Kun;SHENG Chi. Energy Levels of Valence Subbands in Si/Sil-x Gex Quantum Well by Admittance Spectroscopy[J]. 中国物理快报, 2000, 17(4): 288-290.
l-x Gex Quantum Well by Admittance Spectroscopy. Chin. Phys. Lett., 2000, 17(4): 288-290.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I4/288
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2000, Vol. 17 
