Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection
ZHAO Ce-zhou1 , LIU En-ke2 , LI Guo-zheng2 , LIU Yu-liang2 , GUO Lin3
1 Microelectronics Institute, Xidian University, Xian 710071
2 Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
3 Sichuan Institute of Solid-state Circuits, Chongqing 630060
Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection
ZHAO Ce-zhou1 ;LIU En-ke2 ;LI Guo-zheng2 ;LIU Yu-liang2 ;GUO Lin3
1 Microelectronics Institute, Xidian University, Xian 710071
2 Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
3 Sichuan Institute of Solid-state Circuits, Chongqing 630060
关键词 ：
42.82.-m ,
78.55.-m ,
42.79.-e
Abstract ： Based on the large cross-section single-mode rib waveguide condition, the total internal reflection and the free-carrier plasma dispersion effect, a silicon-on-insulator (SOI) 2 × 2 symmetric optical waveguide switch with a transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. The device performance is measured at the wavelength of 1.3μm. It shows that the crosstalk and insertion loss are less than -18.1 and 4.8 dB, respectively, at an injection current of 60mA, and response time is 110 ns.
Key words ：
42.82.-m
78.55.-m
42.79.-e
出版日期: 1997-02-01
:
42.82.-m
(Integrated optics)
78.55.-m
(Photoluminescence, properties and materials)
42.79.-e
(Optical elements, devices, and systems)
引用本文:
ZHAO Ce-zhou;LIU En-ke;LI Guo-zheng;LIU Yu-liang;GUO Lin. Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection[J]. 中国物理快报, 1997, 14(2): 106-108.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I2/106
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