PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD
GUO shuwen1,3, TAN shongsheng1,2, WANG Weiyuan1,2
1Laboratories of Transducer Technology, Academia Sinica, Shanghai
2Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
3Department of Physics, Jiangxi University, Nanchang 320029
PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD
GUO shuwen1,3;TAN shongsheng1,2;WANG Weiyuan1,2
1Laboratories of Transducer Technology, Academia Sinica, Shanghai
2Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
3Department of Physics, Jiangxi University, Nanchang 320029
Abstract： A novel μc-Si:F:H film growth technique has been developed using a windowless photo-enhanced chemical vapor deposition (photo-CVD) system. The films contain of two phases with the microcrystallites embedded in amorphous materials. The films contain the crystallites with volume of fraction of 0.17-0.23 and average grain size of 32-85nm. The conductivity up to 16(Ω.cm)-1 and gauge factor (GF) of about 12 are obtained.
GUO shuwen;TAN shongsheng;WANG Weiyuan;. PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD[J]. 中国物理快报, 1989, 6(12): 563-565.
GUO shuwen, TAN shongsheng, WANG Weiyuan,. PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD. Chin. Phys. Lett., 1989, 6(12): 563-565.
1989, Vol. 6 
