TIME-RESOLVED PHOTOLUMINESCENCE FROM Inx Ga1-x As/GaAs SINGLE QUANTUM WELL
QIAN Shixiong, YUAN Shu, LI Yufen, T.G .Andersson1 , CHEN Zonggui2 , PENG Wenji3 , YU Zhenxin3
Department of Physics, Fudan University, Shanghai 200433
1 Department of Applied Physics, Charlmers University of Technology, Sweden
2 Institute of Semiconductor, Academia Sinica, Beijing, 100083
3 Institute of Laser Spectroscopy, Zhongshan University, Guangzhou 510275
TIME-RESOLVED PHOTOLUMINESCENCE FROM Inx Ga1-x As/GaAs SINGLE QUANTUM WELL
QIAN Shixiong;YUAN Shu;LI Yufen;T.G .Andersson1 ;CHEN Zonggui2 ;PENG Wenji3 ;YU Zhenxin3
Department of Physics, Fudan University, Shanghai 200433
1 Department of Applied Physics, Charlmers University of Technology, Sweden
2 Institute of Semiconductor, Academia Sinica, Beijing, 100083
3 Institute of Laser Spectroscopy, Zhongshan University, Guangzhou 510275
关键词 ：
78.55.Cr
Abstract ： We have measured the time-resolved photoluminescence spectra of several Inx Ga1-x As/GaAs single quantum well samples at 77K. The different temporal behaviors of the photoluminescence (PL) from the GaAs layer and the excitonic emission from the Inx Ga1-x As well were obtained. The lifetime for the exciton in the Inx Ga1-x As well were determined to be 110-170ps. The trapping efficiency of the well to the carriers was about 80%.
Key words ：
78.55.Cr
出版日期: 1989-12-01
引用本文:
QIAN Shixiong;YUAN Shu;LI Yufen;T.G .Andersson;CHEN Zonggui;PENG Wenji;YU Zhenxin
. TIME-RESOLVED PHOTOLUMINESCENCE FROM Inx Ga1-x As/GaAs SINGLE QUANTUM WELL[J]. 中国物理快报, 1989, 6(12): 559-562.
x Ga1-x As/GaAs SINGLE QUANTUM WELL. Chin. Phys. Lett., 1989, 6(12): 559-562.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1989/V6/I12/559
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1989, Vol. 6 
