Surface Acoustic Wave Velocity and Electromechanical Coupling
Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy
CHEN Zhen1, LU Da-Cheng1, WANG Xiao-Hui1, LIU Xiang-Lin1, HAN Pei-De1, YUAN Hai-Rong1, WANG Du1, WANG Zhan-Guo1, HE Shi-Tang2, LI Hong-Lang2, YAN Li3, CHEN Xiao-Yang3
1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Acoustics, Chinese Academy of Sciences, Beijing 100080
3Surface Acoustic Wave Corporation, Institute No.23 of China Aerospace Corporation, Beijing 100854
Surface Acoustic Wave Velocity and Electromechanical Coupling
Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy
1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Acoustics, Chinese Academy of Sciences, Beijing 100080
3Surface Acoustic Wave Corporation, Institute No.23 of China Aerospace Corporation, Beijing 100854
Abstract： High-quality and high-resistivity GaN films were grown on (0001) sapphire face by metal-organic vapor phase epitaxy. To measure the surface acoustic wave properties accurately, we deposited metallized interdigital trans-ducers on the GaN surface. The acoustic surface wave velocity and electromechanical coupling coefficient were measured, respectively, to be 5667m/s and 1.9% by the pulse method.
CHEN Zhen;LU Da-Cheng;WANG Xiao-Hui;LIU Xiang-Lin;HAN Pei-De;YUAN Hai-Rong;WANG Du;WANG Zhan-Guo;HE Shi-Tang;LI Hong-Lang;YAN Li;CHEN Xiao-Yang. Surface Acoustic Wave Velocity and Electromechanical Coupling
Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy[J]. 中国物理快报, 2001, 18(10): 1418-1419.
CHEN Zhen, LU Da-Cheng, WANG Xiao-Hui, LIU Xiang-Lin, HAN Pei-De, YUAN Hai-Rong, WANG Du, WANG Zhan-Guo, HE Shi-Tang, LI Hong-Lang, YAN Li, CHEN Xiao-Yang. Surface Acoustic Wave Velocity and Electromechanical Coupling
Coefficient of GaN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy. Chin. Phys. Lett., 2001, 18(10): 1418-1419.
2001, Vol. 18 
