摘要Self-seeded aluminium nitride (AlN) crystals are grown in tungsten and hot pressed boron nitride (HPBN) crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized by high-resolution transmission electronic microscopy (HRTEM), scanning electron microscopy (SEM) and Micro-Raman spectroscopy. The results indicate that the better quality crystals can be collected in conical tungsten crucible.
Abstract：Self-seeded aluminium nitride (AlN) crystals are grown in tungsten and hot pressed boron nitride (HPBN) crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized by high-resolution transmission electronic microscopy (HRTEM), scanning electron microscopy (SEM) and Micro-Raman spectroscopy. The results indicate that the better quality crystals can be collected in conical tungsten crucible.
(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
引用本文:
HAN Qi-Feng;DUAN Cheng-Hong;QIU Kai;JI Chang-Jian;LI Xin-Hua;ZHONG Fei;YIN Zhi-Jun;CAO Xian-Cun;ZHOU Xiu-Ju;WANG Yu-Qi. Effect of Crucibles on Qualities of Self-Seeded Aluminium Nitride Crystals Grown by Sublimation[J]. 中国物理快报, 2007, 24(12): 3555-3558.
HAN Qi-Feng, DUAN Cheng-Hong, QIU Kai, JI Chang-Jian, LI Xin-Hua, ZHONG Fei, YIN Zhi-Jun, CAO Xian-Cun, ZHOU Xiu-Ju, WANG Yu-Qi. Effect of Crucibles on Qualities of Self-Seeded Aluminium Nitride Crystals Grown by Sublimation. Chin. Phys. Lett., 2007, 24(12): 3555-3558.
[1] Miyanaga M, Mizuhara N, Fujiwara S, Shimazu M, Nakahata H andKawase T 2007 J. Cryst. Growth 300 13 [2] Herro Z G, Zhuang D, Schlesser R, Collazo R and Sitar Z 2006 J. Cryst. Growth 286 205 [3] Gu Z, Du L, Edgar J H, Nepal N, Lin J Y, Jiang H X and Witt R 2006 J. Cryst. Growth 297 105 [4] Yakimova R, Kakanakova-Georgieva A, Yazdi G R, Gueorguiev G K andSyv\"aj\"arvi M 2005 J. Cryst. Growth 281 81 [5] Davies J and Simpson P 1979 Induction HeatingHandbook (New York: McGraw-Hill) chap 12 p 396 [6] Zhuang D, Edgar J H, Strojek B, Chaudhuri J and Rek Z 2004 J. Cryst. Growth 262 89 [7] Epelbaum B M, Seitzb C, Magerlb A, Bickermanna M and Winnacke A2004 J. Cryst. Growth 265 577 [8] Epelbaum B M, Heimann P, Bickermann M and Winnacker A 2005 Phys. Status Solidi C 2 2070 [9]Li J, Hu X B, Jiang S Z, Ning L N, Wang Y M, Chen X F, Xu XG, Wang J Y and Jiang M H 2006 J. Cryst. Growth 293 93 [10] Mokhov E N, Avdeev O V, Barash I S, Chemekova T Y, Roenkov A D,Segal A S, Wolfson A A, Makarov Y N, Ramm M G and Helava H 2005 J.Cryst. Growth 281 93 [11] Bai J, Huang X and Dudley M 2006 Mater. Sci. Semiconduct.Processing 9 180 [12] Shi Y, Liu B, Liu L H, Edgar J H, Payzant E A, Hayes J M andKuball M 2001 MRS Internet J. Nitride Semiconduct. Res. 6 5 [13] Kamler G, Weyher J L, Grzegory I, Jezierska E and Wosi\'nskiT 2002 J. Cryst. Growth 246 21 [14] Bickermann M, Epelbaum B M and Winnacker A 2003 Phys. StatusSolidi C 0 1993
2007, Vol. 24 
