[1] Miyanaga M, Mizuhara N, Fujiwara S, Shimazu M, Nakahata H and
Kawase T 2007 J. Cryst. Growth 300 13

[2] Herro Z G, Zhuang D, Schlesser R, Collazo R and Sitar Z 2006
J. Cryst. Growth 286 205

[3] Gu Z, Du L, Edgar J H, Nepal N, Lin J Y, Jiang H X and Witt R 2006
J. Cryst. Growth 297 105

[4] Yakimova R, Kakanakova-Georgieva A, Yazdi G R, Gueorguiev G K and
Syv\"aj\"arvi M 2005 J. Cryst. Growth 281 81

[5] Davies J and Simpson P 1979 Induction Heating
Handbook (New York: McGraw-Hill) chap 12 p 396

[6] Zhuang D, Edgar J H, Strojek B, Chaudhuri J and Rek Z 2004
J. Cryst. Growth 262 89

[7] Epelbaum B M, Seitzb C, Magerlb A, Bickermanna M and Winnacke A
2004 J. Cryst. Growth 265 577

[8] Epelbaum B M, Heimann P, Bickermann M and Winnacker A 2005
Phys. Status Solidi C 2 2070

[9]Li J, Hu X B, Jiang S Z, Ning L N, Wang Y M, Chen X F, Xu X
G, Wang J Y and Jiang M H 2006 J. Cryst. Growth 293 93

[10] Mokhov E N, Avdeev O V, Barash I S, Chemekova T Y, Roenkov A D,
Segal A S, Wolfson A A, Makarov Y N, Ramm M G and Helava H 2005 J.
Cryst. Growth 281 93

[11] Bai J, Huang X and Dudley M 2006 Mater. Sci. Semiconduct.
Processing 9 180

[12] Shi Y, Liu B, Liu L H, Edgar J H, Payzant E A, Hayes J M and
Kuball M 2001 MRS Internet J. Nitride Semiconduct. Res. 6 5

[13] Kamler G, Weyher J L, Grzegory I, Jezierska E and Wosi\'nski
T 2002 J. Cryst. Growth 246 21

[14] Bickermann M, Epelbaum B M and Winnacker A 2003 Phys. Status
Solidi C 0 1993