Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells
ZHAO De-Gang1, JIANG De-Sheng1, ZHU Jian-Jun1, LIU Zong-Shun1, ZHANG Shu-Ming1, WANG Yu-Tian1, YANG Hui 1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125
Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells
ZHAO De-Gang1, JIANG De-Sheng1, ZHU Jian-Jun1, LIU Zong-Shun1, ZHANG Shu-Ming1, WANG Yu-Tian1, YANG Hui 1,2
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 1000832Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125
摘要Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of InGaN multiple quantum wells (MQWs) are investigated. It is found that the EL intensity increases with the number of satellite peaks in the x-ray diffraction experiments of InGaN MQW samples. It is indicated that the rough interface will lead the reduction of EL intensity of InGaN MQW samples. It is also found that the EL intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. It is suggested that the EL intensity of InGaN MQWs can be improved by decreasing the interface roughness and dislocation density.
Abstract：Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of InGaN multiple quantum wells (MQWs) are investigated. It is found that the EL intensity increases with the number of satellite peaks in the x-ray diffraction experiments of InGaN MQW samples. It is indicated that the rough interface will lead the reduction of EL intensity of InGaN MQW samples. It is also found that the EL intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. It is suggested that the EL intensity of InGaN MQWs can be improved by decreasing the interface roughness and dislocation density.
ZHAO De-Gang;JIANG De-Sheng;ZHU Jian-Jun;LIU Zong-Shun;ZHANG Shu-Ming;WANG Yu-Tian;YANG Hui;. Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells[J]. 中国物理快报, 2008, 25(11): 4143-4146.
ZHAO De-Gang, JIANG De-Sheng, ZHU Jian-Jun, LIU Zong-Shun, ZHANG Shu-Ming, WANG Yu-Tian, YANG Hui,. Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells. Chin. Phys. Lett., 2008, 25(11): 4143-4146.
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2008, Vol. 25 
