摘要Centimetre-long ZnO fibres are synthesized by vapour transportation via thermal evaporation of ZnO powders. The growth process is carried out in a graphite crucible, in which ZnO powder is loaded as the source material, and a silicon wafer is positioned on the top of the crucible as the growth substrate. During the growth process, the source temperature is kept at 800°C, and the substrate temperature is kept at 600°C. Typical growth time to obtain centimetre-long ZnO fibres is 5-10 hours. Scanning electron microscopy (SEM), x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) measurement results show that ZnO fibres are single crystalline with high crystalline quality and very low defects concentration.
Abstract：Centimetre-long ZnO fibres are synthesized by vapour transportation via thermal evaporation of ZnO powders. The growth process is carried out in a graphite crucible, in which ZnO powder is loaded as the source material, and a silicon wafer is positioned on the top of the crucible as the growth substrate. During the growth process, the source temperature is kept at 800°C, and the substrate temperature is kept at 600°C. Typical growth time to obtain centimetre-long ZnO fibres is 5-10 hours. Scanning electron microscopy (SEM), x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) measurement results show that ZnO fibres are single crystalline with high crystalline quality and very low defects concentration.
[1] Klingshirn C 1975 Phys. Status Solidi (B) 71547 [2] Trivikrama R G S and Tarakarama R D 1999 SensorsActuators B 55 166 [3] Xu J Q, Shun Y, Pan Q P and Qin J H 2000 SensorsActuators B 66 161 [4] Yoshino Y, Makino T, Katayama Y and Hata T 2000 Vacuum 59 538 [5] Chen M, Pei Z L, Sun C, Gong J, Huang R F and Wen L S 2001 Mater. Sci. Eng. B 85 212 [6] Kim H, Horwitz J S, Kim W H, Makinen A J, Kafafi Z H andChrisey D B 2002 Thin Solid Films 420-421 539 [7] Ntep J M, Hassani S S, Lusson A, Tromson-Carli A,Ballutaud D, Didier G and Triboulet R 1999 J. Crystal Growth 207 30 [8] Kim T W and Yoon Y S 2000 J. Crystal Growth 212 411 [9] Matsubara K, Fons P, Yamada A, Watanabe M and Niki S 1999 Thin Solid Films 347 238 [10] Kong X Y and Wang Z L 2003 Nano Lett. 3 1625 [11] Kong X Y, Ding Y, Yang R and Wang Z L 2004 Science 303 1348 [12] Sun X M, Chen X and Li Y D 2002 J. Crystal Growth 244 218 [13] Hirano S, Takeuchi N, Shimada S and Masuya K 2005 J.Appl. Phys. 98 094305 [14] Huang M H, Wu Y Y, Feick H, Tran N, Weber E and Yang P D2001 Adv. Mater. 13 113 [15] Matsushita T, Kodaira K, Saito J and Shida R 1974 J.Crystal Growth 26 147 [16] Zhou Z W, Deng H, Yi J and Liu S K 1999 Mater. Res.Bull. 34 1563 [17] Satoh M, Tanaka N, Ueda Y, Ohshio S and Saitoh H 1999 J. Appl. Phys 38 L586 [18] Li W J, Shi E W, Zhong W Z and Yin Z W 1999 J.Crystal Growth 203 186 [19] Zhang J, Sun L D, Pan H Y, Liao C S, and Yan C H 2002 New J. Chem. 26 33 [20] Wang Y G, Yuen C, Lau S P, Yu S F and Tay B K 2003 Chem. Phys. Lett. 377 329 [21] Yuan H T and Zhang Y 2004 J. Crystal Growth 263 119 [22] Yao B D, Chan Y F and Wang N 2002 Appl. Phys. Lett. 81 757 [23] Li S Y, Lin P, Lee C Y and Tseng T Y 2004 Appl.Phys. Lett. 95 3711 [24] Joint Committee on Powder Diffraction Standards (JCPDS)No 80-0075 [25] Hu J Q, Ma X L, Xie Z Y, Wong N B, Lee C S and Lee S T2001 Chem. Phys. Lett. 344 97
2008, Vol. 25 
