Growth and Morphology of β–FeSi2 Single Crystal with Chemical Vapor Transport
ZHAO Jian-hua1,2, LI Yan-chun2, LIU Ri-ping2, ZHANG Xiang-yi1, ZHOU Zhen-hua1, WANG Chao-ying1, XU Ying-fan1, WANG Wen-kui1,2
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Institute of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004
Growth and Morphology of β–FeSi2 Single Crystal with Chemical Vapor Transport
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Institute of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004
Abstract： Single crystals of β–FeSi2 have been grown from vapor by employing chemical vapor transport technique and using iodine as transport agent in a closed ampoule. In the experiment, β–FeSi2 single crystals with well-developed faces and edges have been observed on the silicon substrate, but no needlelike ones have been found. The changes in the size and the geometric shape of the growth ampoule and temperature gradient are primary factors which result in the variation on β–FeSi2 single crystal morphology.
ZHAO Jian-hua;LI Yan-chun;LIU Ri-ping;ZHANG Xiang-yi;ZHOU Zhen-hua;WANG Chao-ying;XU Ying-fan;WANG Wen-kui;. Growth and Morphology of β–FeSi2 Single Crystal with Chemical Vapor Transport[J]. 中国物理快报, 1999, 16(3): 208-210.
ZHAO Jian-hua, LI Yan-chun, LIU Ri-ping, ZHANG Xiang-yi, ZHOU Zhen-hua, WANG Chao-ying, XU Ying-fan, WANG Wen-kui,. Growth and Morphology of β–FeSi2 Single Crystal with Chemical Vapor Transport. Chin. Phys. Lett., 1999, 16(3): 208-210.
1999, Vol. 16 
