Electrochemical Deposition and Properties of ZnTe Nanowire Array
YANG You-Wen1,2, LI Liang2, YE Min1,2, WU Yu-Cheng1,2, XIE Ting1, LI Guang-Hai2
1College of Material Science and Engineering, Hefei University of Technology, Hefei 2300092Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
Electrochemical Deposition and Properties of ZnTe Nanowire Array
YANG You-Wen1,2;LI Liang2;YE Min1,2;WU Yu-Cheng1,2;XIE Ting1;LI Guang-Hai2
1College of Material Science and Engineering, Hefei University of Technology, Hefei 2300092Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
摘要Pulsed electrodeposited technique is applied to fabricate ZnTe nanowire arrays with different diameters into the anodic alumina membrane in citric acid solution. The x-ray powder diffraction, scanning electron microscopy and transmission electron microscopy indicate that the high ordered, uniform and single-crystalline nanowires have been fabricated. The optical absorption spectra of the nanowire array show that the optical absorption band edge of the ZnTe nanowire array exhibit a blue shift compared with that of bulk ZnTe, and the nonlinear current-voltage characteristic is observed.
Abstract：Pulsed electrodeposited technique is applied to fabricate ZnTe nanowire arrays with different diameters into the anodic alumina membrane in citric acid solution. The x-ray powder diffraction, scanning electron microscopy and transmission electron microscopy indicate that the high ordered, uniform and single-crystalline nanowires have been fabricated. The optical absorption spectra of the nanowire array show that the optical absorption band edge of the ZnTe nanowire array exhibit a blue shift compared with that of bulk ZnTe, and the nonlinear current-voltage characteristic is observed.
[1] Mahalingam T 2002 Semicond. Sci. Technol. 17 465 [2] Chang J H et al 2002 Phys. Status Solidi B 229 995 [3] Rakhshani A E and Pradeep B 2003 Appl. Phys. A: Mater. Sci.Process. 79 2021 [4] Ishizaki T, Ohtomo T and Fuwa A 2004 J. Electron.Soc. C 151 161 [5] Camacho J et al 2002 J. Appl. Phys. 92 10 [6] Rakhshani A E 2004 Semicond. Sci. Technol. 19 543 [7] Mahalingam T, John V S and Sebastian P J 2002 J. Phys.:Condens. Matter. 14 5367 [8] Khan M R H 1994 J. Phys. D: Appl. Phys. 27 2190 [9] Shan C X et al 2003 Chin. Phys. Lett. 20 2049 [10] Hayashi S et al 1989 Phys. Rev. B 40 5544 [11] McGary P D and Stadlera B J H 2005 J. Appl. Phys. 97 10R503 [12] Piao Y Z et al 2005 Electrochim. Acta 50 2997 [13] Sklar G P et al 2005 Nanotechnology 16 1265 [14] Ursache A et al 2005 J. Appl. Phys. 97 10J322 [15] Dobrev D et al 2001 Appl. Phys. A 72 729 [16] Sun M et al 2001 Appl. Phys. Lett. 78 2964 [17] Zhang Y et al 2002 Adv. Mater. 14 1227 [18] John V S, Mahalingam T and Chu J P 2005 Solid-StateElectron. 49 3 [19] Li L et al 2005 Appl. Phys. A 80 1053 [20] Li L et al 2005 J. Phys. Chem. B 109 12394 [21] Xiao Z L et al 2002 Nano Lett. 2 1293 [22] Ishizaki T, Ohtomo Z T and Fuwa A 2004 J. Phys. D: Appl.Phys. 37 255 [23] Liu S Q and Huang K 2005 Solar Energy Mater. SolarCells 85 125 [24] Gates B et al 2001 J. Am. Chem. Soc. 123 11500
2007, Vol. 24 
