Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence
XIE Yong1,2, JIE Wan-Qi1, WANG Tao1, WIEDENMANN Michael2, NEUSCHL Benjamin2, MADEL Manfred2, WANG Ya-Bin1, FENEBERG Martin2,3, THONKE Klaus2
1State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072 2Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany 3Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence
XIE Yong1,2, JIE Wan-Qi1, WANG Tao1, WIEDENMANN Michael2, NEUSCHL Benjamin2, MADEL Manfred2, WANG Ya-Bin1, FENEBERG Martin2,3, THONKE Klaus2
1State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072 2Institut für Quantenmaterie/Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany 3Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
Low density ZnO nanorods are grown by modified chemical vapor deposition on silicon substrates using gold as a catalyst. We use high resolution photoluminescence spectroscopy to gain the optical properties of these nanorods in large scale. The as-grown samples show sharp near-band-gap luminescence with a full width at half maximum of bound exciton peaks at about 300 µeV, and the ratio of ultraviolet/yellow luminescence larger than 100. Highly spatial and spectral resolved scanning electron microscope-cathodoluminescence is performed to excite the ZnO nanorods in single rods or different positions of single rods with the vapour-solid growth mechanism. The bottom of the nanorod has a 3.31-eV luminescence, which indicates that basal plane stacking faults are related to the defects that are created at the first stage of growth due to the misfit between ZnO and Si.
Low density ZnO nanorods are grown by modified chemical vapor deposition on silicon substrates using gold as a catalyst. We use high resolution photoluminescence spectroscopy to gain the optical properties of these nanorods in large scale. The as-grown samples show sharp near-band-gap luminescence with a full width at half maximum of bound exciton peaks at about 300 µeV, and the ratio of ultraviolet/yellow luminescence larger than 100. Highly spatial and spectral resolved scanning electron microscope-cathodoluminescence is performed to excite the ZnO nanorods in single rods or different positions of single rods with the vapour-solid growth mechanism. The bottom of the nanorod has a 3.31-eV luminescence, which indicates that basal plane stacking faults are related to the defects that are created at the first stage of growth due to the misfit between ZnO and Si.
2012, Vol. 29 
