摘要By means of low-temperature (10K) Fourier transform infrared absorption spectroscopy, the kinetics of nitrogen indiffusion in Czochralski (CZ) silicon annealed at 1150--1250°C in nitrogen ambient is investigated. Moreover, the nitrogen diffusivities in CZ silicon at elevated temperatures deduced herein are in good agreement with those previously obtained in float-zone silicon, thus leading to the conclusion that the nitrogen indiffusion in CZ silicon at elevated temperatures is via nitrogen pairs.
Abstract：By means of low-temperature (10K) Fourier transform infrared absorption spectroscopy, the kinetics of nitrogen indiffusion in Czochralski (CZ) silicon annealed at 1150--1250°C in nitrogen ambient is investigated. Moreover, the nitrogen diffusivities in CZ silicon at elevated temperatures deduced herein are in good agreement with those previously obtained in float-zone silicon, thus leading to the conclusion that the nitrogen indiffusion in CZ silicon at elevated temperatures is via nitrogen pairs.
(Interaction between different crystal defects; gettering effect)
引用本文:
LI Ming;MA Xiang-Yang;YANG De-Ren. Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient[J]. 中国物理快报, 2008, 25(2): 648-650.
LI Ming, MA Xiang-Yang, YANG De-Ren. Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient. Chin. Phys. Lett., 2008, 25(2): 648-650.
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2008, Vol. 25 
