MOCVD Growth of GaAs/Al<suB>x</suB>Ga<suB>1-x</suB>As Superlattices and Their Smoothing Effects

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	XU Xiangang
	HUANG Baibiao
	REN Hongwen
	LIOU Shiwen
	JIANG Minhua

关键词 ： 81.15.Gh, 68.55.Jk, 61.60.+m

Abstract： This paper presents metalorganic chemical vapor deposition (MOCVD) growth of GaAs/Al_xGa_1-xAs superlattices in our laboratory. Superlattice structures are characterized by using cross-sectional transmission electron microscopy, and the results show that they are in agreement with designed parameters. The superlattice used as bufferlayer can smooth out interface fluctuations. The high mobility of Ga-containing species and the anisotropic growth rate of GaAs on differentfacets lead to the planarization of the wavy interface, whereas the low mobility of Al-containing species tends to preserve the surface shape.

Key words： 81.15.Gh 68.55.Jk 61.60.+m

出版日期: 1992-02-01

:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.Jk
	61.60.+m

引用本文:

XU Xiangang;HUANG Baibiao;REN Hongwen;LIOU Shiwen;JIANG Minhua . MOCVD Growth of GaAs/Al_xGa_1-xAs Superlattices and Their Smoothing Effects[J]. 中国物理快报, 1992, 9(2): 109-112.
XU Xiangang, HUANG Baibiao, REN Hongwen, LIOU Shiwen, JIANG Minhua . MOCVD Growth of GaAs/Al_xGa_1-xAs Superlattices and Their Smoothing Effects. Chin. Phys. Lett., 1992, 9(2): 109-112.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y1992/V9/I2/109