Optical Anisotropy of InAs Monolayer in (311)-Oriented GaAs Matrix
Y.H.Chen, Z.Yang, XU Bo1 , WANG Zhan-guo1 , LIANG Ji-ben1
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
1 Laboratory of Semiconductor Materials Science, lnstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Optical Anisotropy of InAs Monolayer in (311)-Oriented GaAs Matrix
Y.H.Chen;Z.Yang;XU Bo1 ;WANG Zhan-guo1 ;LIANG Ji-ben1
Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
1 Laboratory of Semiconductor Materials Science, lnstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
73.20.Dx ,
71.35.+z ,
78.55.Cr
Abstract ： In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface.
Key words ：
73.20.Dx
71.35.+z
78.55.Cr
出版日期: 1997-12-01
引用本文:
Y.H.Chen;Z.Yang;XU Bo;WANG Zhan-guo;LIANG Ji-ben. Optical Anisotropy of InAs Monolayer in (311)-Oriented GaAs Matrix[J]. 中国物理快报, 1997, 14(12): 932-935.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I12/932
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1997, Vol. 14 
