Photoreflectance Study of GaN Films on Sapphire Substrate
QIN Lin-hong, YANG Kai, ZHENG You-dou, ZHANG Rong,
DAI Xing-jiang, FENG Duan, HUANG Zhen-chun1, J. C. Chen1
Department of Physics, Nanjing University, Nanjing 210093
1Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228-5398, USA
Photoreflectance Study of GaN Films on Sapphire Substrate
QIN Lin-hong;YANG Kai;ZHENG You-dou;ZHANG Rong,
DAI Xing-jiang;FENG Duan;HUANG Zhen-chun1;J. C. Chen1
Department of Physics, Nanjing University, Nanjing 210093
1Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228-5398, USA
Abstract： Photoreflectance was used to study the optical properties of single crystal hexagonal GaN films on (0001) sapphire substrate grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined as 3.400eV and the possible origin of the signal was discussed. Optical absorption and reflection were measured. The optical absorption edge of 3.38 eV, and the reflectivity peak at 3.3 eV confirmed the results of photoreflectance.
(Absorption and reflection spectra: visible and ultraviolet)
引用本文:
QIN Lin-hong;YANG Kai;ZHENG You-dou;ZHANG Rong;
DAI Xing-jiang;FENG Duan;HUANG Zhen-chun;J. C. Chen
. Photoreflectance Study of GaN Films on Sapphire Substrate[J]. 中国物理快报, 1996, 13(2): 153-156.
QIN Lin-hong, YANG Kai, ZHENG You-dou, ZHANG Rong,
DAI Xing-jiang, FENG Duan, HUANG Zhen-chun, J. C. Chen
. Photoreflectance Study of GaN Films on Sapphire Substrate. Chin. Phys. Lett., 1996, 13(2): 153-156.
1996, Vol. 13 
