Polarized Infrared Spectra of Intersubband Transitions in GaAs/AlGaAs Step Multiquantum Wells
CUI Da-fu, YUAN Zhen-yu, CHEN Zheng-hao, MA Jian-wei, ZHOU Yue-liang, LÜ Hui-bin, HE Meng, YANG Gno-zhen, ZHANG Shu-de*
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
* Institute of Rock and Mineral Analysis, Beijing 100037
Polarized Infrared Spectra of Intersubband Transitions in GaAs/AlGaAs Step Multiquantum Wells
CUI Da-fu;YUAN Zhen-yu;CHEN Zheng-hao;MA Jian-wei;ZHOU Yue-liang;LÜ Hui-bin;HE Meng;YANG Gno-zhen;ZHANG Shu-de*
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
* Institute of Rock and Mineral Analysis, Beijing 100037
关键词 :
78.66.Fd ,
42.50.Hz ,
73.20.Dx
Abstract : The polarization dependence of conduction intersubband transitions in GaAs/AIGaAs step multiquantum well structures has been studied using infrared spectroscopy. For S-polarized 45°oblique angle incidence configuration with respect to sample surface normal, the transverse electric (TE) active intersubband transitions were observed. Both transverse electric and transverse magnetic (TM) active intersubband transitions were obtained in P-polarized incidence at 45°angle on sample, which shows a small energy splitting between TE and TM absorption peaks.
Key words :
78.66.Fd
42.50.Hz
73.20.Dx
出版日期: 1996-02-01
:
78.66.Fd
(III-V semiconductors)
42.50.Hz
(Strong-field excitation of optical transitions in quantum systems; multiphoton processes; dynamic Stark shift)
73.20.Dx
引用本文:
CUI Da-fu;YUAN Zhen-yu;CHEN Zheng-hao;MA Jian-wei;ZHOU Yue-liang;LÜHui-bin;HE Meng;YANG Gno-zhen;ZHANG Shu-de*. Polarized Infrared Spectra of Intersubband Transitions in GaAs/AlGaAs Step Multiquantum Wells[J]. 中国物理快报, 1996, 13(2): 149-152.
CUI Da-fu, YUAN Zhen-yu, CHEN Zheng-hao, MA Jian-wei, ZHOU Yue-liang, LÜ, Hui-bin, HE Meng, YANG Gno-zhen, ZHANG Shu-de*. Polarized Infrared Spectra of Intersubband Transitions in GaAs/AlGaAs Step Multiquantum Wells. Chin. Phys. Lett., 1996, 13(2): 149-152.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I2/149
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